Reactive ion etching of transition-metal alloys

College

College of Science

Department/Unit

Physics

Document Type

Article

Source Title

Shinku/Journal of the Vacuum Society of Japan

Volume

49

Issue

12

First Page

716

Last Page

721

Publication Date

12-1-2006

Abstract

For production of advanced spin-electronic devices, such as a magnetic random access memory with the higher-density memory cell, a reactive ion etching (RIE) process of transition metal alloys is the indispensable component of development, while no transition-metal compounds with the relatively high vapor pressure have been founded so far. Here, we show the RIE process of a NiFe thin film by using CH4:O2:NH3 discharge. The RIE process was designed by ab initio calculations, and the present result is the first successful demonstration of the chemical effect in the RIE process for transition-metal alloys. The relative etching ratio of NiFe against Ti as the metal mask was decreased by substituting CH4 with CHF3.

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Digitial Object Identifier (DOI)

10.3131/jvsj.49.716

Disciplines

Physics

Keywords

Plasma etching; Transition metal alloys

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