Electrical transport properties of PbSn1-xTe thin films and Pb1-xSnxTe bulk samples
Date of Publication
1996
Document Type
Bachelor's Thesis
Degree Name
Bachelor of Science Major in Physics
Subject Categories
Physics
College
College of Science
Department/Unit
Physics
Abstract/Summary
PbxSn1-xTe thin films deposited by vapor technique and Pb1-xSnxTe bulk samples grown by horizontal unseeded vapor phased growth (HUGV) were characterized through its electronic transport properties. These include resistivity and Hall measurements varied from a temperature of 77K-373K and from 77K-300K respectively using the Van der Pauw technique. Samples 1, 2, and 3 were made as bulk samples, while samples 2A, 3A, and 2B were fabricated thin films. Summary of results of p-T and Hall-T measurements were made to efficiently compare and analyze the results. The experiment showed that there was one semiconductor (sample 3). For Hall measurements, all of the samples exhibit increased in its Hall mobility as the temperature increased. Hall coefficient and Hall voltage behave the same way, but they affect the amount of carrier concentration of the samples.
Abstract Format
html
Language
English
Format
Accession Number
TU07262
Shelf Location
Archives, The Learning Commons, 12F, Henry Sy Sr. Hall
Physical Description
67 leaves ; Computer printout
Keywords
Thin films--Electric properties; Electric conductivity; Semiconductors
Recommended Citation
Almanzor, M. Q., & Ong, M. G. (1996). Electrical transport properties of PbSn1-xTe thin films and Pb1-xSnxTe bulk samples. Retrieved from https://animorepository.dlsu.edu.ph/etd_bachelors/4158
Embargo Period
1-18-2021
