"Carrier recombination efficiency and photocarrier transport in vertica" by Joselito E. Muldera
 

Carrier recombination efficiency and photocarrier transport in vertically aligned silicon nanowire arrays as probed by photoluminescence and terahertz spectroscopy

College

College of Science

Department/Unit

Physics

Document Type

Dissertation

Publication Date

6-2016

Abstract

Terahertz (THz) emission and photoluminescence (PL) spectroscopy were utilized to study the carrier dynamics and recombination characteristics of vertically align silicon nanowire synthesized by metal-assisted electroless etching, respec­tively. It is observed that the carrier dynamics is greatly affected by the presence of pores on the nanowire walls in two-step synthesized silicon nanowires compared to nanowire synthesized using a one-step process. The carriers are collected in these pores, acting as defect sites for efficient carrier r combination upon photoexcitation as shown by the temperature-dependent PL. Th pores also effectively weaken the surface electric field; thereby, deterring the mission of THz radiation. Lastly, the dependence of the THz emission on nanowire length is seen only for the nanowires synthesized by a one-stop process· while the PL intensity of the nanowire samples synthesized by the two-step process exhibited a dependence on nanowire length.

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Disciplines

Physics

Keywords

Nanowires; Nanosilicon

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