Enhanced terahertz emission from SI-GaAs with a sub-wavelength 1D metal array

Authors

Maria Angela B. Faustino, University of the Philippines Diliman
Lorenzo P. Lopez Jr., University of the Philippines Diliman
Jessica Pauline Afalla, National Institute of Physics
Joselito E. Muldera
Mark Jayson Felix, University of the Philippines Diliman
Arnel A. Salvador, National Institute of Physics
Armando S. Somintac, University of the Philippines Diliman
Elmer S. Estacio, National Institute of Physics

College

College of Science

Department/Unit

Physics

Document Type

Conference Proceeding

Source Title

2015 Conference on Lasers and Electro-Optics Pacific Rim

Publication Date

2015

Abstract

Terahertz emission enhancement in SI-GaAs, having a deposited periodic 1D metal array, is reported. The one order enhancement is currently attributed to the localization of the terahertz electromagnetic field at the GaAs apertures.

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Recommended Citation

Faustino, M. B., Lopez, L. P., Afalla, J., Muldera, J. E., Felix, M., Salvador, A. A., Somintac, A. S., & Estacio, E. S. (2015). Enhanced terahertz emission from SI-GaAs with a sub-wavelength 1D metal array. 2015 Conference on Lasers and Electro-Optics Pacific Rim Retrieved from https://animorepository.dlsu.edu.ph/faculty_research/8129

Disciplines

Physics

Keywords

Terahertz spectroscopy; Silicon; Gallium arsenide

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