Porosity dependence of terahertz emission of porous silicon investigated using reflection geometry terahertz time-domain spectroscopy

College

College of Science

Department/Unit

Physics

Document Type

Article

Source Title

Superlattices and Microstructures

Volume

100

Issue

2016

First Page

892

Last Page

899

Publication Date

10-21-2016

Abstract

Porosity dependent terahertz emission of porous silicon (PSi) was studied. The PSi samples were fabricated via electrochemical etching of boron-doped (100) silicon in a solution containing 48% hydrofluoric acid, deionized water and absolute ethanol in a 1:3:4 volumetric ratio. The porosity was controlled by varying the supplied anodic current for each sample. The samples were then optically characterized via normal incidence reflectance spectroscopy to obtain values for their respective refractive indices and porosities. Absorbance of each sample was also computed using the data from its respective reflectance spectrum. Terahertz emission of each sample was acquired through terahertz - time domain spectroscopy. A decreasing trend in the THz signal power was observed as the porosity of each PSi was increased. This was caused by the decrease in the absorption strength as the silicon crystallite size in the PSi was minimized.

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Disciplines

Physics

Keywords

Porous silicon; Porosity; Absorbance scale (Spectroscopy); Terahertz spectroscopy

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