Ultra-low reflectivity polycrystalline silicon surfaces formed by surface structure chemical transfer method

College

College of Science

Department/Unit

Chemistry

Document Type

Article

Source Title

Applied Physics Letters

Volume

103

Publication Date

2013

Abstract

A nanocrystalline Si layer can be formed by the surface structure chemical transfer (SSCT) method in which a platinum mesh is instantaneously contacted with polycrystalline Si wafers immersed in hydrogen peroxide plus hydrofluoric acid solutions. The polycrystalline Si surface after the SSCT method possesses an ultra-low reflectivity. The nanocrystalline Si layer possesses a 100–150 nm thickness, and gives a photoluminescence with a peak maximum at ∼670 nm, indicating band-gap widening. The minority carrier lifetime of as-sliced Si wafers greatly increases after the SSCT method most probably due to the enlargement of the nanocrystalline Si band-gap.

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Disciplines

Chemistry

Keywords

Surface chemistry; Silicon

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