Changes in minority carrier lifetime of hydrogen-terminated Si surfaces in dry-and wet-air
College
College of Science
Department/Unit
Chemistry
Document Type
Article
Source Title
ECS Solid State Letters
Volume
1
Issue
6
First Page
P89
Last Page
P91
Publication Date
9-27-2012
Abstract
Minority carrier lifetime of HF-treated Si (100) surfaces decreases in wet-air more rapidly than in dry-air. XPS measurements show that OH and O are mainly included in Si by keeping in wet-air and dry-air, respectively. OH cannot form network, and thus backbonded OH generates Si dangling bonds. On the other hand, backbonded O can form Si-O-Si networks, leading to the higher lifetime due to lower defect density. When the atmosphere is switched from dry-air to wet-air, the lifetime greatly decreases, and the workfunction increases. These changes are attributed to dominant formation of backbonded OH.
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Recommended Citation
Franco, F. C., Matsumoto, T., Woo-Byoun, K., & Kobayashi, H. (2012). Changes in minority carrier lifetime of hydrogen-terminated Si surfaces in dry-and wet-air. ECS Solid State Letters, 1 (6), P89-P91. Retrieved from https://animorepository.dlsu.edu.ph/faculty_research/5897
Disciplines
Chemistry
Keywords
Silicon—Surfaces; Silicon—Oxidation; Semiconductors
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