Design of reactive ion etching process based on ab-initio calculation - The first step-

Authors

Shigeno Matsumoto, Osaka University
Wilson A. Diño, De La Salle University, Manila
Melanie Y. David, Osaka University
Rifki Muhida, Osaka University
Tanglaw A. Roman, Osaka University
Shinichi Kunikata, Osaka University
Fumiyoshi Takano, National Institute of Advanced Industrial Science and Technology
Hiro Akinaga, National Institute of Advanced Industrial Science and Technology
Hideaki Kasai, Osaka University

College

College of Science

Department/Unit

Physics

Document Type

Article

Source Title

Shinku/Journal of the Vacuum Society of Japan

Volume

50

Issue

6

First Page

437

Last Page

439

Publication Date

9-12-2007

Abstract

We propose an intricate method of Reactive Ion Etching (RIE) process design for transition-metal (TM) materials using ab-initio calculations. The TM materials are inert in dry etching processes since volatile etching by-products cannot be formed easily. However, to achieve new high-performance memories based on the TM materials, a selective dry etching technique such as RIE is eagerly required instead of the conventional ion milling method. In this work, we would like to introduce our scenario of the RIE design for TM materials using the results of CoFe as an example.

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Digitial Object Identifier (DOI)

10.3131/jvsj.50.437

Recommended Citation

Matsumoto, S., Diño, W. A., David, M. Y., Muhida, R., Roman, T. A., Kunikata, S., Takano, F., Akinaga, H., & Kasai, H. (2007). Design of reactive ion etching process based on ab-initio calculation - The first step-. Shinku/Journal of the Vacuum Society of Japan, 50 (6), 437-439. https://doi.org/10.3131/jvsj.50.437

Keywords

Plasma etching; Transition metals

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