Trapping hydrogen with a bimetallic interface

Authors

Michio Okada, Osaka University
Kousuke Moritani, Osaka University
Toshio Kasai, Osaka University
Wilson Agerico Diño, De La Salle University, Manila
Hideaki Kasai, Osaka University
Shouhei Ogura, Institute of Industrial Science
Markus Wilde, Institute of Industrial Science
Katsuyuki Fukutani, Institute of Industrial Science

College

College of Science

Department/Unit

Physics

Document Type

Article

Source Title

Physical Review B - Condensed Matter and Materials Physics

Volume

71

Issue

3

Publication Date

1-1-2005

Abstract

We report results of a study on the interaction of hydrogen with thin Au films grown on an Ir{111} surface at ≈100 K, using nuclear reaction analysis and first-principles calculations. We found that H atoms can be confined at the interface between the bulk-Ir surface and the Au thin film, which is realized by increasing the binding energy and the activation barrier for desorption via lattice relaxation of the Au layer. ©2005 The American Physical Society.

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Digitial Object Identifier (DOI)

10.1103/PhysRevB.71.033408

Recommended Citation

Okada, M., Moritani, K., Kasai, T., Diño, W. A., Kasai, H., Ogura, S., Wilde, M., & Fukutani, K. (2005). Trapping hydrogen with a bimetallic interface. Physical Review B - Condensed Matter and Materials Physics, 71 (3) https://doi.org/10.1103/PhysRevB.71.033408

Disciplines

Physics

Keywords

Hydrogen; Gold films

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