First principles based investigations of materials for resistive RAM

College

College of Science

Department/Unit

Physics

Document Type

Article

Source Title

Journal of Computational and Theoretical Nanoscience

Volume

5

Issue

10

First Page

1976

Last Page

1979

Publication Date

1-1-2008

Abstract

We investigate the suitable materials and device structures for Resistive Random Access Memory (ReRAM) based on the first principles calculations. Our calculations base on the model in which the transition metal oxide layers consist of three atomic layers. From the results of energy gap and magnetic moment of the transition metals, we can expect that CoO/NiO/CoO for the transition metal oxide layer exhibits high-resistance change and high-speed response. Copyright © 2008 American Scientific Publishers. All rights reserved.

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Digitial Object Identifier (DOI)

10.1166/jctn.2008.1003

Disciplines

Physics

Keywords

Nonvolatile random-access memory; Transition metal oxides

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