Terahertz emission enhancement in low-temperaturegrown GaAs with an n-GaAs buffer in reflection and transmission excitation geometries

College

College of Science

Department/Unit

Physics

Document Type

Article

Source Title

Journal of the Optical Society of America B: Optical Physics

Volume

31

Issue

2

First Page

291

Last Page

295

Publication Date

2-1-2014

Abstract

The growth of low-temperature-grown GaAs (LTG-GaAs) on semi-insulating GaAs substrate with a 0.2 μm n-GaAs buffer demonstrated enhanced terahertz (THz) emission in reflection and transmission excitation geometries via time-domain spectroscopy. The transient photocurrent of the sample in reflection and transmission geometries resulting from ultrafast excitation yielded a 215% and 165% increase in the THz emission, respectively, as compared with a sample grown with an undoped GaAs buffer. The LTG-GaAs film with n-GaAs buffer exhibited a significant increase in its built-in field as supported by calculations and photoreflectance experiments. The enhanced THz emission intensity was comparable with bulk p-InAs. © 2014 Optical Society of America.

html

Digitial Object Identifier (DOI)

10.1364/JOSAB.31.000291

Disciplines

Physics

Keywords

Gallium arsenide; Terahertz spectroscopy

Upload File

wf_yes

This document is currently not available here.

Share

COinS