Understanding the formation of midgap states in GaAs(001)-β2(2×4) with surface defects based on density functional theory
College
College of Science
Department/Unit
Physics
Document Type
Conference Proceeding
Source Title
International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
Volume
2018-September
Publication Date
10-25-2018
Abstract
Understanding the defect feature of GaAs(001) in the formation of midgap state is significant in gaining new insights for its applications in efficient photoconductive detection and emission in terahertz (THz) technology. In this work, we investigate the role of surface point defects in the structural and electronic properties of GaAs(001)-β2(2×4) based on density functional theory (DFT). Midgap states were found even on surfaces with high formation energies relative to the clean surface as seen in their band structures. The formation of these states is attributed to the redistribution of charges and supports the observed two-step photon absorption in experiments. © 2018 IEEE.
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Digitial Object Identifier (DOI)
10.1109/IRMMW-THz.2018.8510252
Recommended Citation
Bacuyag, D., David, M., Escano, M., & Tani, M. (2018). Understanding the formation of midgap states in GaAs(001)-β2(2×4) with surface defects based on density functional theory. International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, 2018-September https://doi.org/10.1109/IRMMW-THz.2018.8510252
Disciplines
Physics
Keywords
Gallium arsenide; Photoconductivity; Surfaces (Technology)—Defects; Submillimeter waves
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