Spintronic THz Generation Using a Silicon-based Fe/Pt Bilayer as the Radiation Source
College
College of Science
Department/Unit
Physics
Document Type
Conference Proceeding
Source Title
International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
Volume
2019-September
Publication Date
9-1-2019
Abstract
A spintronic bilayer structure of 2-nm Fe and 3-nm Pt was fabricated by molecular beam epitaxy on a Silicon substrate. We demonstrate that this Fe/Pt on Si heterostructure is an efficient and convenient alternative terahertz emitter particularly for systems which are driven by femtosecond fiber lasers with 1550-nm output wavelength. © 2019 IEEE.
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Digitial Object Identifier (DOI)
10.1109/IRMMW-THz.2019.8873854
Recommended Citation
Mag-Usara, V., Torosyan, G., Talara, M., Afalla, J., Muldera, J., Kitahara, H., Scheuer, L., Sokoluk, D., Papaioannou, E., Rahm, M., Beigang, R., & Tani, M. (2019). Spintronic THz Generation Using a Silicon-based Fe/Pt Bilayer as the Radiation Source. International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, 2019-September https://doi.org/10.1109/IRMMW-THz.2019.8873854
Disciplines
Physics
Keywords
Molecular beam epitaxy; Silicon
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