Detection performance of LT-GaAs-on-silicon bowtie photoconductive antenna prototype
College
College of Science
Department/Unit
Physics
Document Type
Conference Proceeding
Source Title
International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
Volume
2019-September
Publication Date
9-1-2019
Abstract
Bowtie photoconductive antennas (PCAs) with a 10-μm gap were fabricated on epitaxial grown LT-GaAs layers on Silicon substrates (LT-GaAs-on-Si). The samples used were grown with distinct growth parameters. The performance of the PCAs as terahertz detectors are presented in this report. © 2019 IEEE.
html
Digitial Object Identifier (DOI)
10.1109/IRMMW-THz.2019.8874195
Recommended Citation
Afalla, J., De Los Reyes, A., Faustino, A., Vistro, V. D., Bardolaza, H. R., Catindig, G., Gonzales, K., Prieto, E., Muldera, J., Mag-Usara, V., Cabello, N., Copa, V. C., Ferrolino, J., Torosyan, G., Furuya, T., Kitahara, H., Somintac, A., Salvador, A. A., Tani, M., & Estacio, E. (2019). Detection performance of LT-GaAs-on-silicon bowtie photoconductive antenna prototype. International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz, 2019-September https://doi.org/10.1109/IRMMW-THz.2019.8874195
Disciplines
Physics
Keywords
Antennas (Electronics); Gallium arsenide; Photoconductivity; Gallium arsenide semiconductors
Upload File
wf_yes
