Epitaxial growth of p-InAs on GaSb with intense terahertz emission under 1.55-μm femtosecond laser excitation
College
College of Science
Department/Unit
Physics
Document Type
Article
Source Title
Thin Solid Films
Volume
648
First Page
46
Last Page
49
Publication Date
2018
Abstract
We report the molecular beam epitaxy growth of high-quality p-InAs thin films evaluated in the context of 1.55 μm femtosecond laser-excited THz emission efficiency. The presence of p-InAs is confirmed via scanning electron microscopy and X-ray diffraction. Using a GaAs buffer layer, the epitaxial growth of p-InAs layers was successfully achieved. Initiating GaAs deposition by growth interruption, we find that GaAs adheres to the GaSb substrate and provides a quasi-planar surface for the subsequent layers. We also find a significant enhancement in the THz radiation intensity of p-InAs films that is approximately twice compared to that of bulk p-InAs for 1.55 μm wavelength. © 2018 Elsevier B.V.
html
Digitial Object Identifier (DOI)
10.1016/j.tsf.2017.12.022
Recommended Citation
Sadia, C. P., Lopez, L. P., delos Santos, R. M., Muldera, J. E., De Los Reyes, A. E., Tumanguil, M. C., Que, C. T., Mag-usara, V., Tani, M., Somintac, A. S., Estacio, E. S., & Salvador, A. A. (2018). Epitaxial growth of p-InAs on GaSb with intense terahertz emission under 1.55-μm femtosecond laser excitation. Thin Solid Films, 648, 46-49. https://doi.org/10.1016/j.tsf.2017.12.022
Disciplines
Physics
Keywords
Compound semiconductors; Terahertz spectroscopy; Indium arsenide; Molecular beam epitaxy
Upload File
wf_no
