Epitaxial growth of p-InAs on GaSb with intense terahertz emission under 1.55-μm femtosecond laser excitation
College
College of Science
Department/Unit
Physics
Document Type
Article
Source Title
Thin Solid Films
Volume
648
First Page
46
Last Page
49
Publication Date
2-28-2018
Abstract
We report the molecular beam epitaxy growth of high-quality p-InAs thin films evaluated in the context of 1.55 μm femtosecond laser-excited THz emission efficiency. The presence of p-InAs is confirmed via scanning electron microscopy and X-ray diffraction. Using a GaAs buffer layer, the epitaxial growth of p-InAs layers was successfully achieved. Initiating GaAs deposition by growth interruption, we find that GaAs adheres to the GaSb substrate and provides a quasi-planar surface for the subsequent layers. We also find a significant enhancement in the THz radiation intensity of p-InAs films that is approximately twice compared to that of bulk p-InAs for 1.55 μm wavelength. © 2018 Elsevier B.V.
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Digitial Object Identifier (DOI)
10.1016/j.tsf.2017.12.022
Recommended Citation
Sadia, C. P., Lopez, L. P., delos Santos, R. M., Muldera, J. E., De Los Reyes, A. E., Tumanguil, M. C., Que, C. T., Mag-usara, V., Tani, M., Somintac, A. S., Estacio, E. S., & Salvador, A. A. (2018). Epitaxial growth of p-InAs on GaSb with intense terahertz emission under 1.55-μm femtosecond laser excitation. Thin Solid Films, 648, 46-49. https://doi.org/10.1016/j.tsf.2017.12.022
Disciplines
Physics
Keywords
Compound semiconductors; Terahertz spectroscopy; Indium arsenide; Molecular beam epitaxy
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