Ultrafast carrier dynamics and THz conductivity in epitaxial-grown LT-GaAs on silicon for development of THz photoconductive antenna detectors

Authors

Jessica Afalla, University of Fukui
Gerald Catindig, University of the Philippines Diliman
Alexander De Los Reyes, University of the Philippines Diliman
Elizabeth Prieto, University of the Philippines Diliman
Maria Angela Faustino, University of the Philippines Diliman
Victor Vistro, University of the Philippines Diliman
Karl Cedric Gonzales, University of the Philippines Diliman
Hannah Bardolaza, University of the Philippines Diliman
Valynn Katrine Mag-Usara, University of Fukui
Horace Andrew Husay, University of the Philippines Diliman
Joselito Muldera, De La Salle University, Manila
Neil Irvin Cabello, University of the Philippines Diliman
John Paul Ferrolino, University of the Philippines Diliman
Hideaki Kitahara, University of Fukui
Armando Somintac, University of the Philippines Diliman
Arnel A. Salvador, University of the Philippines Diliman
Masahiko Tani, University of Fukui
Elmer Estacio, University of the Philippines Diliman

College

College of Science

Department/Unit

Physics

Document Type

Article

Source Title

Journal of Physics D: Applied Physics

Volume

53

Issue

9

Abstract

Carrier dynamics and photoconductivity in epitaxial-grown low-temperature GaAs on nominal and vicinal Si(1 0 0) substrates ('LT-GaAs/Si') were studied to predict their actual performance as THz photoconductive antenna (PCA) detectors. An optical-pump terahertz-probe technique was used to obtain the transmittance, carrier lifetime and photoconductivity of two LT-GaAs/Si samples, grown using different substrates and different growth protocols. The LT-GaAs grown on Si(1 0 0) substrate with a 4° tilt to 1 1 0 has better crystallinity, in agreement with other reports; while the LT-GaAs layer grown on nominal Si(1 0 0) substrate, though more structurally defective, has a much faster electron trapping time. Fabricated test PCAs with either dipole or bowtie geometries confirm the characterization results. The photoconductivity and carrier lifetime results manifest in the PCA performance, in responsivity, and in detection bandwidth. The prototypes' sensitivities, bandwidths and dynamic ranges show that with some growth optimization, LT-GaAs/Si can be tailored to create economical, broadband THz detectors. © 2019 IOP Publishing Ltd.

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Digitial Object Identifier (DOI)

10.1088/1361-6463/ab5aa7

Recommended Citation

Afalla, J., Catindig, G., De Los Reyes, A., Prieto, E., Faustino, M., Vistro, V., Gonzales, K., Bardolaza, H., Mag-Usara, V., Husay, H., Muldera, J., Cabello, N., Ferrolino, J., Kitahara, H., Somintac, A., Salvador, A. A., Tani, M., & Estacio, E. (2021). Ultrafast carrier dynamics and THz conductivity in epitaxial-grown LT-GaAs on silicon for development of THz photoconductive antenna detectors. Journal of Physics D: Applied Physics, 53 (9) https://doi.org/10.1088/1361-6463/ab5aa7

Disciplines

Physics

Keywords

Gallium arsenide; Silicon; Photoconductivity; Terahertz technology

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