Terahertz emission characteristics of GaMnAs dilute magnetic semiconductor under 650 mT external magnetic field
College
College of Science
Department/Unit
Physics
Document Type
Article
Source Title
Current Applied Physics
Volume
17
Issue
4
First Page
522
Last Page
526
Publication Date
4-1-2017
Abstract
We investigate the effects of an externally applied magnetic field on the terahertz (THz) emission of Gallium Manganese Arsenide (GaMnAs) films grown via molecular beam epitaxy (MBE). Results show that low Mn-doping in GaMnAs resulted to increased THz emission as compared with a SI-GaAs substrate. Further increase in Mn-doping content resulted to a comparably less THz emission, which is attributed to reduced crystallinity and higher free-carrier absorption. Under an external magnetic field, the contributions of the Bup and Bdown-related THz emission were observed to be asymmetric: possibly due to intrinsic magnetic properties of GaMnAs. © 2017 Elsevier B.V.
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Digitial Object Identifier (DOI)
10.1016/j.cap.2017.01.021
Recommended Citation
De Los Reyes, A., Prieto, E., Omambac, K., Porquez, J., Lopez, L. P., Gonzales, K., Vasquez, J., Tumanguil, M., Joselito, J., Yamamoto, K., Tani, M., Somintac, A., Estacio, E., & Salvador, A. (2017). Terahertz emission characteristics of GaMnAs dilute magnetic semiconductor under 650 mT external magnetic field. Current Applied Physics, 17 (4), 522-526. https://doi.org/10.1016/j.cap.2017.01.021
Disciplines
Physics
Keywords
Gallium arsenide; Molecular beam epitaxy; Terahertz spectroscopy
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