Terahertz emission from GaAs-AlGaAs core-shell nanowires on Si (100) substrate: Effects of applied magnetic field and excitation wavelength
College
College of Science
Department/Unit
Physics
Document Type
Article
Source Title
Applied Physics Letters
Volume
102
Issue
6
Publication Date
2-11-2013
Abstract
Terahertz (THz) emission from GaAs-AlGaAs core-shell nanowires (CSNW) on silicon (100) substrates was investigated using THz time-domain spectroscopy. The applied magnetic field polarity dependence strongly suggests that THz emission originated from photo-carriers in the CSNWs. Optical excitation of the GaAs-AlGaAs core-shell yielded a wider THz emission bandwidth compared with that of just the GaAs core material. This result is currently attributed to faster carrier lifetimes in the AlGaAs shell. The THz emission spectral data are supported by time-resolved photoluminescence studies. © 2013 American Institute of Physics.
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Digitial Object Identifier (DOI)
10.1063/1.4791570
Recommended Citation
Ibañes, J., Balgos, M., Jaculbia, R., Salvador, A. A., Somintac, A., Estacio, E., Que, C. T., Tsuzuki, S., Yamamoto, K., & Tani, M. (2013). Terahertz emission from GaAs-AlGaAs core-shell nanowires on Si (100) substrate: Effects of applied magnetic field and excitation wavelength. Applied Physics Letters, 102 (6) https://doi.org/10.1063/1.4791570
Disciplines
Physics
Keywords
Terahertz spectroscopy; Gallium arsenide
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