Luminescence and carrier dynamics in nanostructured silicon

Authors

Neil Irvin Cabello, University of the Philippines Diliman
Philippe Tingzon, University of the Philippines Diliman
Kerr Cervantes, University of the Philippines Diliman
Arven Cafe, University of the Philippines Diliman
Joybelle Lopez, University of the Philippines Diliman
Arvin Mabilangan, University of the Philippines Diliman
Alexander De Los Reyes, University of the Philippines Diliman
Lorenzo P. Lopez, University of the Philippines Diliman
Joselito Muldera, De La Salle University, Manila
Dinh Cong Nguyen, Vietnamese Academy of Science and Technology Institute of Physics and Electronics
Xuan Tu Nguyen, Vietnamese Academy of Science and Technology Institute of Physics and Electronics
Hong Minh Pham, Vietnamese Academy of Science and Technology Institute of Physics and Electronics
Thanh Binh Nguyen, Vietnamese Academy of Science and Technology Institute of Physics and Electronics
Arnel A. Salvador, University of the Philippines Diliman
Armando Somintac, University of the Philippines Diliman
Elmer Estacio, University of the Philippines Diliman

College

College of Science

Department/Unit

Physics

Document Type

Article

Source Title

Journal of Luminescence

Volume

186

First Page

312

Last Page

317

Publication Date

6-1-2017

Abstract

We report increased radiation in the visible and terahertz (THz) regimes in silicon(Si)-based nanostructures. The nanostructures, Si nanowires (SiNWs) and porous Si (PSi), were synthesized via electroless and electrochemical surface modification, respectively. In particular, picosecond (ps) radiative lifetimes in the order of 250 ps were obtained from time-resolved photoluminescence (PL) measurements. The fast radiative lifetimes are associated with increased surface defect density in PSi. Reflectance measurements confirmed that optical absorption of the nanostructured Si samples increased relative to bulk Si. Both nanostructured Si exhibit THz emission, albeit weaker in PSi due to higher density of defects. An inverse relationship between PL and THz emission strength was therefore observed. Lastly, the wider bandwidth of the THz emission in SiNWs is attributed to the directionality of the transient photocurrent compared to the more disordered carrier transport in PSi. © 2017 Elsevier B.V.

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Digitial Object Identifier (DOI)

10.1016/j.jlumin.2017.02.012

Recommended Citation

Cabello, N., Tingzon, P., Cervantes, K., Cafe, A., Lopez, J., Mabilangan, A., De Los Reyes, A., Lopez, L. P., Muldera, J., Nguyen, D., Nguyen, X., Pham, H., Nguyen, T., Salvador, A. A., Somintac, A., & Estacio, E. (2017). Luminescence and carrier dynamics in nanostructured silicon. Journal of Luminescence, 186, 312-317. https://doi.org/10.1016/j.jlumin.2017.02.012

Disciplines

Physics

Keywords

Nanostructures; Nanosilicon; Photoluminescence

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