Negative differential resistance in polymer tunnel diodes using atomic layer deposited, TiO2 tunneling barriers at various deposition temperatures
College
College of Science
Department/Unit
Physics
Document Type
Article
Source Title
Organic Electronics
Volume
47
First Page
228
Last Page
234
Publication Date
8-1-2017
Abstract
Atomic layer deposition (ALD) presents a method to deposit uniform and conformal thin-film layers with a high degree of control and repeatability. Quantum functional devices that provide opportunities in low-power molecular and organic based memory and logic via thin metal-oxide tunneling layer were previously reported by Yoon et al. [1]. Demonstrated here area polymer tunnel diodes (PTD) with high negative differential resistance (NDR) using an ALD deposited tunneling layer grown between 250 °C – 350 °C. A critical relationship between deposition temperature, oxygen vacancy concentration and room temperature NDR is presented. In this work, for a TiO2 deposition temperature of 250 °C, the peak NDR voltage position (Vpeak) and associated peak current density (Jpeak) are ∼4.3 V and −0.14 A/cm2, respectively, with a PVCR as high as 1.69 while operating at room temperature. The highest PVCR recorded was 4.89 ± 0.18 using an ALD deposition temperature of 350 °C. The key advantages of the ALD process used in fabrication of PTDs are increased repeatability and manufacturability. © 2017 Elsevier B.V.
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Digitial Object Identifier (DOI)
10.1016/j.orgel.2017.05.015
Recommended Citation
Guttman, J. J., Chambers, C. B., Villagracia, A. C., Santos, G. C., & Berger, P. R. (2017). Negative differential resistance in polymer tunnel diodes using atomic layer deposited, TiO2 tunneling barriers at various deposition temperatures. Organic Electronics, 47, 228-234. https://doi.org/10.1016/j.orgel.2017.05.015
Disciplines
Physics
Keywords
Atomic layer deposition; Tunnel diodes; Titanium dioxide; Tunneling (Physics); Conjugated polymers
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