Bi2S3 nanowires fabricated via HVPC growth technique for photosensor application

Authors

Bheim Mendez Llona, De La Salle University, Manila
Gil Nonato C. Santos, De La Salle University, Manila
Reuben V. Quiroga, De La Salle University, Manila

College

College of Science

Department/Unit

Physics

Document Type

Article

Source Title

International Journal of Scientific and Engineering Research

Volume

3

Issue

8

Publication Date

8-2012

Abstract

Bi₂S₃ Nanowires was successfully fabricated using Horizontal Vapor Phase Crystal growth technique for photosensor application. A 35 mg of bismuth sulfide powder with purity rate of 99.9% was utilized. The growth temperature was varied at 600 oC to 1200 oC with growth time of 4 to 8 hours where the ramp time was set at 60 minutes. The as-prepared products were characterized using an SEM, EDX, and Applied Spectral Imaging. The optimum growth was at 1200 C deposited on zone 2 on a fused silica tube. The energy band gap was 2.58 eV which has blue spectra. The nanowires demonstrated its functionality as photosensor in a metalsemiconductor-metal planar structure based on the voltage time spectra obtained.

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Recommended Citation

Llona, B. M., Santos, G. C., & Quiroga, R. V. (2012). Bi2S3 nanowires fabricated via HVPC growth technique for photosensor application. International Journal of Scientific and Engineering Research, 3 (8) Retrieved from https://animorepository.dlsu.edu.ph/faculty_research/13001

Disciplines

Physics

Keywords

Nanowires; Bismuth

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