Bi2S3 nanowires fabricated via HVPC growth technique for photosensor application

College

College of Science

Department/Unit

Physics

Document Type

Article

Source Title

International Journal of Scientific and Engineering Research

Volume

3

Issue

8

Publication Date

8-2012

Abstract

Bi2S3 Nanowires was successfully fabricated using Horizontal Vapor Phase Crystal growth technique for photosensor application. A 35 mg of bismuth sulfide powder with purity rate of 99.9% was utilized. The growth temperature was varied at 600 oC to 1200 oC with growth time of 4 to 8 hours where the ramp time was set at 60 minutes. The as-prepared products were characterized using an SEM, EDX, and Applied Spectral Imaging. The optimum growth was at 1200 C deposited on zone 2 on a fused silica tube. The energy band gap was 2.58 eV which has blue spectra. The nanowires demonstrated its functionality as photosensor in a metalsemiconductor-metal planar structure based on the voltage time spectra obtained.

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Disciplines

Physics

Keywords

Nanowires; Bismuth

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