Pulsed-laser deposited TiN2 coatings on silicon substrate

Authors

Alva Lolit Ortile, De La Salle University, Manila
Kelwin Law, De La Salle University, Manila
Jacqueline Yu Eng Hong, De La Salle University, Manila
Gil Nonato C. Santos, De La Salle University, Manila
Reuben V. Quiroga
Wilson O. Garcia, University of the Philippines Diliman

College

College of Science

Department/Unit

Physics

Document Type

Conference Proceeding

Source Title

Samahang Pisika ng Pilipinas

Publication Date

2002

Abstract

In this study, the pulsed laser deposition technique was used to deposit TiN₂ coatings on silicon. Forty samples were studied. From the results of the SEM and EDX, the optimum parameters for deposition is deposition for two hours with vacuum pressure of 5x10^-4 Torr, nitrogen gas flow between 2 to 10 mbar, substrate temperature of 400°C, pulse wavelength of 1064 nm, pulse excitation energy of 150 mJ, and target to substrate distance of 30 mm. EDX confirmed an atomic composition of 37.419% titanium and 61.85% nitrogen deposited on silicon.

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Recommended Citation

Ortile, A., Law, K., Yu Eng Hong, J., Santos, G. C., Quiroga, R. V., & Garcia, W. O. (2002). Pulsed-laser deposited TiN2 coatings on silicon substrate. Samahang Pisika ng Pilipinas Retrieved from https://animorepository.dlsu.edu.ph/faculty_research/12788

Disciplines

Physics

Keywords

Titanium nitride; Pulsed laser deposition; Silicon; Coatings

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