Terahertz emission enhancement in InAs thin films using silicon lens coupler

College

College of Science

Department/Unit

Physics

Document Type

Article

Source Title

Japanese Journal of Applied Physics

Volume

50

Issue

8R

Publication Date

2011

Abstract

Enhancement of the pulsed terahertz radiation generated from a lens-coupled InAs thin film excited by a femtosecond laser is reported. A Si hemispherical lens was used as a lens coupler and attached to the substrate-side of a 520-nm-thick InAs film, grown on a Si substrate. An enhancement factor of 7.5 times in the THz wave amplitude from the InAs film with the lens coupler was observed as compared with the bare InAs film. This enhancement is attributed to the improvement in the collimation condition of the radiated THz wave as it propagates through the index-matched lens coupler into free space.

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Digitial Object Identifier (DOI)

10.1143/JJAP.50.080207

Disciplines

Optics | Semiconductor and Optical Materials

Keywords

Terahertz technology; Thin films—Optical properties; Indium arsenide

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