Terahertz radiation from InAs films on silicon substrates excited by femtosecond laser pulses

College

College of Science

Department/Unit

Physics

Document Type

Article

Source Title

Japanese Journal of Applied Physics

Volume

48

Issue

IR

Publication Date

2009

Abstract

Using ultrashort laser pulses, terahertz (THz) emission from InAs thin films grown on Si substrates is investigated. Results show that the measured radiation in transmission geometry exhibits an enhancement of the low frequency components and the strongest emission is from the thickest 520 nm film. Comparison of the emission from a 520 nm film and of bulk GaAs in reflection geometry reveals that the main THz radiation mechanism is the photo-Dember effect. Moreover, comparing the emission from bulk InAs, the thin films can also be categorized as strong THz emitters.

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Digitial Object Identifier (DOI)

10.1143/JJAP.48.010211

Disciplines

Physics | Semiconductor and Optical Materials

Keywords

Terahertz technology; Indium arsenide; Femtosecond lasers

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