Intense terahertz emission from undoped GaAs/n-type GaAs and InAs/AlSb structures grown on Si substrates in the transmission-geometry excitation
College
College of Science
Department/Unit
Physics
Document Type
Article
Source Title
Applied Physics B
Volume
103
Publication Date
2011
Abstract
Intense terahertz radiation was generated from femtosecond laser-irradiated InAs and GaAs layers on Si substrates. Results show that InAs/Si and GaAs/Si films can be excited in reflection and transmission geometries. The InAs/Si film exhibited weaker emission for both excitation cases but it will be more feasible as a spectroscopic THz source due to the absence of complex spectral features in its emission spectrum. The GaAs/Si emission is characterized by Fabry–Perot oscillations but it is 90% of that of p-InAs bulk crystal emission intensity in the reflection geometry. Excitation fluence measurements showed that the InAs/Si film saturates easily due to the laser’s shallow penetration depth in InAs.
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Digitial Object Identifier (DOI)
10.1007/s00340-011-4371-0
Recommended Citation
Estacio, E., Takatori, S., Pham, M. H., Yoshioka, T., Nakazato, T., Raduban, M. C., Shimizu, T., Sarukura, N., Hangyo, M., Que, C. T., Tani, M., Edamura, T., Nakajima, M., Misa, J. V., Jaculbia, R., Somintac, A., & Salvador, A. (2011). Intense terahertz emission from undoped GaAs/n-type GaAs and InAs/AlSb structures grown on Si substrates in the transmission-geometry excitation. Applied Physics B, 103 https://doi.org/10.1007/s00340-011-4371-0
Disciplines
Physics
Keywords
Terahertz technology; Gallium arsenide; Indium arsenide; Transmission electron microscopy
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