A structure for enhanced terahertz emission from a photoexcited semiconductor surface

College

College of Science

Department/Unit

Physics

Document Type

Article

Source Title

Applied Physics B

Volume

100

First Page

695

Last Page

698

Publication Date

2010

Abstract

A structure that can provide enhancement of terahertz emission from a semiconductor surface excited with femtosecond laser pulses is proposed. The structure consists of a semiconductor layer on a Si substrate with metal coating on the upper surface of the layer and a Si lens attached to the bottom of the substrate. The semiconductor is excited through a hole in the coating and emits terahertz radiation through the substrate lens. We demonstrate theoretically that the proposed structure can increase the terahertz yield by orders of magnitude as compared to the previously used schemes of terahertz emission from a semiconductor surface.

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Digitial Object Identifier (DOI)

10.1007/s00340-010-4206-4

Disciplines

Physics

Keywords

Terahertz technology; Semiconductors—Optical properties

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