Terahertz emission from indium oxide films grown on MgO substrates using sub-bandgap photon energy excitation
College
College of Science
Department/Unit
Physics
Document Type
Article
Source Title
Optics Express
Volume
20
Issue
4
First Page
4518
Last Page
4524
Publication Date
2012
Abstract
Indium oxide (In2O3) films grown by thermal oxidation on MgO substrates were optically excited by femtosecond laser pulses having photon energy lower than the In2O3 bandgap. Terahertz (THz) pulse emission was observed using time domain spectroscopy. Results show that THz emission saturates at an excitation fluence of ~400 nJ/cm2. Even as two-photon absorption has been excluded, the actual emission mechanism has yet to be confirmed but is currently attributed to carriers due to weak absorption from defect levels that are driven by a strain field at the interface of the substrate and the grown film.
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Recommended Citation
Estacio, E. S., Que, C. T., Awitan, F. C., Bugante, J., de Vera, F., Azares, J., Afalla, J., de Vero, J., Somintac, A. S., Sarmago, R. V., Salvador, A. A., Yamamoto, K., & Tani, M. (2012). Terahertz emission from indium oxide films grown on MgO substrates using sub-bandgap photon energy excitation. Optics Express, 20 (4), 4518-4524. Retrieved from https://animorepository.dlsu.edu.ph/faculty_research/11902
Disciplines
Physics
Keywords
Terahertz technology; Thin films—Optical properties; Magnesium oxide
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