Fabrication of polypyrrole (p-toluenesulphonate doped) metal Schottky contacts

Date of Publication

1995

Document Type

Bachelor's Thesis

Degree Name

Bachelor of Science Major in Physics

College

College of Science

Department/Unit

Physics

Abstract/Summary

Studies in conducting polymers has been a growing interest in the field of microelectronics. One such microelectronic device being fabricated is a PPy(p-TS)-based diode called Schottky diode, which consist of semi-conductor [PPy(p-TS)]/metal foil [A], Sn, Pb, and In] junction. In this paper, fabrication of Schottky contact -- via pressure contact and direct deposition -- and its properties were analyzed. PPy(p-TS) is found to form a rectifying junction with In even with minimal pressure of 500 Pa. Junctions with A1, Sn and Pb generally exhibit assymetric I-V curves, suggesting non-ohmic, but not fully rectifying behavior. The PPy(p-TS) samples of lower conductivity was also observed as producing poor rectifying contacts. Junction fabrication with direct deposition of PPy(p-TS) on AL and Pb are not possible with the solvent and dopant used. Although PPy(p-TS) is deposited onto Sn, 1-V characterization of PPy(p-TS)/Sn is impossible for film deposits on Sn are very thin and very brittle. This only suggest that the development of electrodeposited PPy(p-TS)-based devices is inherently difficult.

Abstract Format

html

Language

English

Format

Print

Accession Number

TU06727

Shelf Location

Archives, The Learning Commons, 12F, Henry Sy Sr. Hall

Physical Description

70 leaves ; Computer print-out.

Keywords

Pyrrole; Polymers and polymerization; Metal semiconductor field-effect transistors; Diodes, Schottky-barrier; x4 Schottky-barrier diodes

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