A theoretical approach on the doping process by diffusion of silicon and its resistivity measurements using the four-point probe method
Date of Publication
1991
Document Type
Bachelor's Thesis
Degree Name
Bachelor of Science in Electronics and Communications Engineering
Subject Categories
Engineering
College
Gokongwei College of Engineering
Department/Unit
Electronics and Communications Engineering
Abstract Format
html
Language
English
Format
Accession Number
TU05423
Shelf Location
Archives, The Learning Commons, 12F, Henry Sy Sr. Hall
Physical Description
75 numb. leaves : Computer print-out (photocopy).
Keywords
Semiconductor doping; Siliconizing (Metallurgy)
Recommended Citation
Decano, H. G., Fernandez, F. C., Flores, R. H., Nosenas, J. N., & San Juan, J. C. (1991). A theoretical approach on the doping process by diffusion of silicon and its resistivity measurements using the four-point probe method. Retrieved from https://animorepository.dlsu.edu.ph/etd_bachelors/8786
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