Measurement of the minority carrier lifetime of PbxSn1-xTe thin films using the method of photoconductive decay
Date of Publication
1996
Document Type
Bachelor's Thesis
Degree Name
Bachelor of Science Major in Physics
Subject Categories
Physics
College
College of Science
Department/Unit
Physics
Abstract/Summary
The minority carrier lifetime of PbxSn1-x Te thin films were determined using the photoconductive decay set-up. The fabricated thin film samples had a concentration of X = 0.2, 0.5, and 0.8. Each sample was illuminated by a stroboscope with a frequency of 3000 revolutions per minute from which the photoconductive decay was observed using a Palmscope digital storage oscilloscope interfaced with a computer. The voltage versus time characteristic of the sample was observed at a time exposure of 1 to 5 usec. From the obtained graph, the lifetime of each sample was then computed. At X = 0.2, the minority carrier lifetime of samples 3a, 4a, 5a and 6a was found to be 0.258 used, 0.229 usec, 0.330 usec and 0.305 usec. For x = 0.5 and 0.8, the minority carrier lifetime of the samples were 0.28 usec and 0.27 usec respectively.
Abstract Format
html
Language
English
Format
Accession Number
TU07265
Shelf Location
Archives, The Learning Commons, 12F, Henry Sy Sr. Hall
Physical Description
63 leaves ; Computer printout
Keywords
Thin films; Photoconductivity
Recommended Citation
Cua, A. T., & Lau, J. A. (1996). Measurement of the minority carrier lifetime of PbxSn1-xTe thin films using the method of photoconductive decay. Retrieved from https://animorepository.dlsu.edu.ph/etd_bachelors/4157
Embargo Period
1-18-2021
