Measurement of the minority carrier lifetime of PbxSn1-xTe thin films using the method of photoconductive decay

Date of Publication

1996

Document Type

Bachelor's Thesis

Degree Name

Bachelor of Science Major in Physics

Subject Categories

Physics

College

College of Science

Department/Unit

Physics

Abstract/Summary

The minority carrier lifetime of PbxSn1-x Te thin films were determined using the photoconductive decay set-up. The fabricated thin film samples had a concentration of X = 0.2, 0.5, and 0.8. Each sample was illuminated by a stroboscope with a frequency of 3000 revolutions per minute from which the photoconductive decay was observed using a Palmscope digital storage oscilloscope interfaced with a computer. The voltage versus time characteristic of the sample was observed at a time exposure of 1 to 5 usec. From the obtained graph, the lifetime of each sample was then computed. At X = 0.2, the minority carrier lifetime of samples 3a, 4a, 5a and 6a was found to be 0.258 used, 0.229 usec, 0.330 usec and 0.305 usec. For x = 0.5 and 0.8, the minority carrier lifetime of the samples were 0.28 usec and 0.27 usec respectively.

Abstract Format

html

Language

English

Format

Print

Accession Number

TU07265

Shelf Location

Archives, The Learning Commons, 12F, Henry Sy Sr. Hall

Physical Description

63 leaves ; Computer printout

Keywords

Thin films; Photoconductivity

Embargo Period

1-18-2021

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