Integrated circuit design and characterization of a 1 volt CMOS low noise amplifier utilizing 90 nm technology
Date of Publication
2012
Document Type
Bachelor's Thesis
Degree Name
Bachelor of Science in Electronics and Communications Engineering
College
Gokongwei College of Engineering
Department/Unit
Electronics and Communications Engineering
Thesis Adviser
Ann E. Dulay
Defense Panel Chair
Roderick Yao Yap
Defense Panel Member
Alexander C. Abad
Aaron Don M. Africa
Abstract/Summary
In able to cope up with the needs and demands of the fast growing technology, engineers unremittingly strive to come up and improve designs of integrated circuits. Since this is not a well-developed field in the country, the authors of this paper wish to contribute to the emerging industry of IC design. Several researchers conducted recently tell us of the significance of the up and coming integrated circuits, one of which is that of the low noise amplifiers, a type of amplifier most oftenly used in the field of telecommunications. Low Noise Amplifiers are considered as one of the most important stages in RF receivers. Its main function is to amplify extremely low signals without adding noise, hence conserving the required signal-to-noise ratio of the whole communications system at extremely low power levels. The general objective of this thesis project is to design a Low Noise Amplifier implemented on a 90 nm CMOS process operating at 1 volt.
Abstract Format
html
Language
English
Format
Accession Number
TU16888
Shelf Location
Archives, The Learning Commons, 12F, Henry Sy Sr. Hall
Physical Description
182: ill.(some col.) 28 cm
Recommended Citation
Dacumos, R. C., Gumba, J. C., Hong, J. S., & Kim, W. (2012). Integrated circuit design and characterization of a 1 volt CMOS low noise amplifier utilizing 90 nm technology. Retrieved from https://animorepository.dlsu.edu.ph/etd_bachelors/14825
