Design and implementation of a 1 volt low dropout voltage regulator on a 0.180um CMOS process driving a clock circuit load

Date of Publication

2013

Document Type

Bachelor's Thesis

Degree Name

Bachelor of Science in Electronics and Communications Engineering

Subject Categories

Engineering

College

Gokongwei College of Engineering

Department/Unit

Electronics and Communications Engineering

Thesis Adviser

Ann E. Dulay

Defense Panel Member

Gerald P. Arada

Donabel D. Abuan

Abstract/Summary

The main purpose of this research is to design a low dropout voltage regulator (LDO) on 0.18um CMOS process with a maximum dropout of 500mV at a maximum load current of 500uA current. The specifications of this block are based on its application to regulate the clock circuit of a smart wire chip, which serve as the load. The clock circuit load mentioned above ranges from 100KHz to 7.2MHz. The main component of this block is a folded cascode amplifier that functions as an error amplifier with a PMOS pass transistor that operates mainly at its linear region to function as a resistive device. The error amplifier with a reference value of 0.8V outputs a specific value to drive the gate of the pass transistor to produce a specific resistance value between the drain and the source to correct the output value to 1V not exceeding the allowable ripple voltage of 100mV given the input voltage of 1.5V 100mV ripple.

The design satisfies the above conditions on all process corners and is implemented using the SYNOPSYS custom designer schematic and layout tool. The circuit has an efficiency of 34.23% a load regulation of 1.1%, and an accuracy of 97.90% all measured at typical-typical. These parameters are measured in pre-layouts, post-layout on all process corners.

Abstract Format

html

Language

English

Format

Print

Accession Number

TU18208

Shelf Location

Archives, The Learning Commons, 12F, Henry Sy Sr. Hall

Physical Description

vi, 126 unnumbered leaves :illustrations (some colored) ; 28 cm.

Keywords

Voltage regulators Metal oxide semiconductors, Complementary

This document is currently not available here.

Share

COinS