Carrier recombination efficiency and photocarrier transport in vertically aligned silicon nanowire arrays as probed by photoluminescence and terahertz spectroscopy
College of Science
Terahertz (THz) emission and photoluminescence (PL) spectroscopy were utilized to study the carrier dynamics and recombination characteristics of vertically align silicon nanowire synthesized by metal-assisted electroless etching, respectively. It is observed that the carrier dynamics is greatly affected by the presence of pores on the nanowire walls in two-step synthesized silicon nanowires compared to nanowire synthesized using a one-step process. The carriers are collected in these pores, acting as defect sites for efficient carrier r combination upon photoexcitation as shown by the temperature-dependent PL. Th pores also effectively weaken the surface electric field; thereby, deterring the mission of THz radiation. Lastly, the dependence of the THz emission on nanowire length is seen only for the nanowires synthesized by a one-stop process· while the PL intensity of the nanowire samples synthesized by the two-step process exhibited a dependence on nanowire length.
Muldera, J. E. (2016). Carrier recombination efficiency and photocarrier transport in vertically aligned silicon nanowire arrays as probed by photoluminescence and terahertz spectroscopy. Retrieved from https://animorepository.dlsu.edu.ph/faculty_research/8136