Terahertz emission enhancement in low-temperaturegrown GaAs with an n-GaAs buffer in reflection and transmission excitation geometries
College of Science
Journal of the Optical Society of America B: Optical Physics
The growth of low-temperature-grown GaAs (LTG-GaAs) on semi-insulating GaAs substrate with a 0.2 μm n-GaAs buffer demonstrated enhanced terahertz (THz) emission in reflection and transmission excitation geometries via time-domain spectroscopy. The transient photocurrent of the sample in reflection and transmission geometries resulting from ultrafast excitation yielded a 215% and 165% increase in the THz emission, respectively, as compared with a sample grown with an undoped GaAs buffer. The LTG-GaAs film with n-GaAs buffer exhibited a significant increase in its built-in field as supported by calculations and photoreflectance experiments. The enhanced THz emission intensity was comparable with bulk p-InAs. © 2014 Optical Society of America.
Digitial Object Identifier (DOI)
Prieto, E. P., Vizcara, S. B., Somintac, A. S., Salvador, A. A., Estacio, E. S., Que, C. T., Yamamoto, K., & Tani, M. (2014). Terahertz emission enhancement in low-temperaturegrown GaAs with an n-GaAs buffer in reflection and transmission excitation geometries. Journal of the Optical Society of America B: Optical Physics, 31 (2), 291-295. https://doi.org/10.1364/JOSAB.31.000291
Gallium arsenide; Terahertz spectroscopy