Title

Understanding the formation of midgap states in GaAs(001)-β2(2×4) with surface defects based on density functional theory

College

College of Science

Department/Unit

Physics

Document Type

Conference Proceeding

Source Title

International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz

Volume

2018-September

Publication Date

10-25-2018

Abstract

Understanding the defect feature of GaAs(001) in the formation of midgap state is significant in gaining new insights for its applications in efficient photoconductive detection and emission in terahertz (THz) technology. In this work, we investigate the role of surface point defects in the structural and electronic properties of GaAs(001)-β2(2×4) based on density functional theory (DFT). Midgap states were found even on surfaces with high formation energies relative to the clean surface as seen in their band structures. The formation of these states is attributed to the redistribution of charges and supports the observed two-step photon absorption in experiments. © 2018 IEEE.

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Digitial Object Identifier (DOI)

10.1109/IRMMW-THz.2018.8510252

Disciplines

Physics

Keywords

Gallium arsenide; Photoconductivity; Surfaces (Technology)—Defects; Submillimeter waves

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