Title

Interruption-assisted epitaxy of faceted p-InAs on buffered GaSb for terahertz emitters

College

College of Science

Department/Unit

Physics

Document Type

Article

Source Title

Applied Physics Express

Volume

8

Issue

3

Publication Date

1-1-2015

Abstract

We demonstrate molecular beam epitaxy growth of p-InAs layers on GaAs-buffered GaSb that may be suitable for terahertz applications. GaAs buffer deposition is initiated by applying growth interruption. Reflection high-energy electron diffraction shows that GaAs growth proceeds to a quasi-two-dimensional growth mode. The scheme allows growth of a p-InAs layer 600nm to 1.0 μm thick. Growth performed without GaAs and growth interruption resulted in decomposition of the p-InAs. When the scheme is used, the ensuing p-InAs first follows quasi-two-dimensional growth before favoring faceted islanding. Under 800-nm-wavelength femtosecond laser excitation, the p-InAs layer generates terahertz signals 70% of that of bulk p-InAs. © 2015 The Japan Society of Applied Physics.

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Digitial Object Identifier (DOI)

10.7567/APEX.8.035501

Disciplines

Physics

Keywords

Molecular beam epitaxy; Gallium arsenide

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