Interruption-assisted epitaxy of faceted p-InAs on buffered GaSb for terahertz emitters
College of Science
Applied Physics Express
We demonstrate molecular beam epitaxy growth of p-InAs layers on GaAs-buffered GaSb that may be suitable for terahertz applications. GaAs buffer deposition is initiated by applying growth interruption. Reflection high-energy electron diffraction shows that GaAs growth proceeds to a quasi-two-dimensional growth mode. The scheme allows growth of a p-InAs layer 600nm to 1.0 μm thick. Growth performed without GaAs and growth interruption resulted in decomposition of the p-InAs. When the scheme is used, the ensuing p-InAs first follows quasi-two-dimensional growth before favoring faceted islanding. Under 800-nm-wavelength femtosecond laser excitation, the p-InAs layer generates terahertz signals 70% of that of bulk p-InAs. © 2015 The Japan Society of Applied Physics.
Digitial Object Identifier (DOI)
Sadia, C. P., Muldera, J., Estacio, E. S., Somintac, A. S., Salvador, A. A., Que, C. T., Yamamoto, K., & Tani, M. (2015). Interruption-assisted epitaxy of faceted p-InAs on buffered GaSb for terahertz emitters. Applied Physics Express, 8 (3) https://doi.org/10.7567/APEX.8.035501
Molecular beam epitaxy; Gallium arsenide