Characterization of fabricated polythiophene thin films by transverse R-T, sem and FTIR

Date of Publication

1998

Document Type

Bachelor's Thesis

Degree Name

Bachelor of Science Major in Physics

Subject Categories

Physics

College

College of Science

Department/Unit

Physics

Abstract/Summary

Characterization of fabricated samples of PT films were done using transverse resistance measurement, i.e. resistance measured normal to the surface of the films, from 80-303 Kelvin, SEM for surface morphology observation and FTIR for IR-spectra studies. Results show that samples three and four exhibit semiconducting-type properties based on their Resistance vs. Temperature graphs, where the resistance of the films decreases as temperature increases. It could also be observed from the SEM data that samples which show semiconducting-type properties (samples 3 & 4) have a uniform surface morphology. IR-spectra studies show that the samples all exhibited some peaks near 1400 cm 4 which are the following: for samples one, two and three at 1429.30 cm 4, sample four at 1434.42 cm 4, sample five at 1444.67 cm 4.

Abstract Format

html

Language

English

Format

Print

Accession Number

TU08686

Shelf Location

Archives, The Learning Commons, 12F, Henry Sy Sr. Hall

Physical Description

68 leaves ; Computer printout

Keywords

Semiconductor films; Thin films; Polymers; Electrochemistry; Inorganic compounds--Synthesis; Thiophenes—Spectra

Embargo Period

1-31-2021

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